Single step electrochemical etching in ammonium fluoride

被引：9

作者：

Ohji, H ^{[1
]}

French, PJ ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Informat Technol & Syst, DIMES, NL-2600 GA Delft, Netherlands

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 74卷 / 1-3期

关键词：

electrochemical etching; free standing structure; porous silicon; wet etching; ammonium fluoride;

D O I：

10.1016/S0924-4247(98)00334-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new technique of micromachining using single step electrochemical etching in an ammonium fluoride based etchant. This etching technology is to fabricate 3-D structures in single crystal silicon by a combination of anisotropic and isotropic etching mode. The etch rate and morphology of the etched surface are investigated for the etch parameters (etchant concentration, current density). Optimization of these parameters mak:es it possible to make free standing beams. Using the ammonium fluoride as the etchant, aluminium survives the etching. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：109 / 112

页数：4

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