Optical properties and characterization of zinc nitride nanoneedles prepared from ball-milled Zn powders

被引:21
作者
Khan, Waheed S. [1 ]
Cao, Chuanbao [1 ]
Ping, Dong Yu [1 ]
Nabi, Ghulam [1 ]
Hussain, Sajad [1 ]
Butt, Faheem K. [1 ]
Cao, Tai [1 ]
机构
[1] Beijing Inst Technol, Res Ctr Mat Sci, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
基金
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词
Semiconductors; Nanocrystalline materials; Optical properties; STRUCTURAL-PROPERTIES; GAN NANOWIRES; THIN-FILMS; GROWTH; PHOTOLUMINESCENCE;
D O I
10.1016/j.matlet.2011.01.040
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zinc nitride nanoneedles (ZNNs) with diameters at stem and tip parts as 200-300 nm and 30-70 nm respectively have been prepared by the nitridation of ball-milled zinc powders at 600 degrees C for 120 min under NH(3) gas environment. The structural, compositional and morphological characterizations of the product were conducted by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy and transmission electron microscopy. From transmission spectrum data, an indirect band gap of 2.72 eV has been calculated for ZNNs whereas photoluminescence studies exhibited a strong UV excitonic mission band at 395 nm as well as two weak defect related blue emissions at 453 and 465 nm. A vapor-solid (VS) process based growth mechanism for the formation of ZNNs has also been discussed briefly. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1264 / 1267
页数:4
相关论文
共 17 条
[1]   Properties of n-type ZnN thin films as channel for transparent thin film transistors [J].
Aperathitis, E. ;
Kambilafka, V. ;
Modreanu, M. .
THIN SOLID FILMS, 2009, 518 (04) :1036-1039
[2]   Structural, electrical and optical properties of zinc nitride thin films prepared by reactive rf magnetron sputtering [J].
Futsuhara, M ;
Yoshioka, K ;
Takai, O .
THIN SOLID FILMS, 1998, 322 (1-2) :274-281
[3]   Photoluminescence and field emission properties of ZnS: Mn nanoparticles synthesized by rf-magnetron sputtering technique [J].
Ghosh, P. K. ;
Ahmed, Sk. F. ;
Jana, S. ;
Chattopadhyay, K. K. .
OPTICAL MATERIALS, 2007, 29 (12) :1584-1590
[4]   Synthesis and optical properties of tantalum oxide films prepared by ionized plasma-assisted pulsed laser deposition [J].
He, Xiliang ;
Wu, Jiehua ;
Zhao, Lili ;
Meng, Jia ;
Gao, Xiangdong ;
Li, Xiaomin .
SOLID STATE COMMUNICATIONS, 2008, 147 (3-4) :90-93
[5]   On the nitrides of the metals of the first subgroup of the periodic system - Metal amides and metal nitrides X announcement [J].
Juza, R ;
Hahn, H .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1940, 244 (02) :133-148
[6]   Thermal oxidation of n-type ZnN films made by rf-sputtering from a zinc nitride target, and their conversion into p-type films [J].
Kambilafka, V. ;
Voulgaropoulou, P. ;
Dounis, S. ;
Iliopoulos, E. ;
Androulidaki, M. ;
Saly, V. ;
Ruzinsky, M. ;
Aperathitis, E. .
SUPERLATTICES AND MICROSTRUCTURES, 2007, 42 (1-6) :55-61
[7]   Synthesis, growth mechanism and optical characterization of zinc nitride hollow structures [J].
Khan, Waheed S. ;
Cao, Chuanbao .
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (11) :1838-1843
[8]   OPTICAL BAND-GAP OF ZN3N2 FILMS [J].
KURIYAMA, K ;
TAKAHASHI, Y ;
SUNOHARA, F .
PHYSICAL REVIEW B, 1993, 48 (04) :2781-2782
[9]   Nanobelts of semiconducting oxides [J].
Pan, ZW ;
Dai, ZR ;
Wang, ZL .
SCIENCE, 2001, 291 (5510) :1947-1949
[10]   Synthesis, stoichiometry and thermal stability of Zn3N2 powders prepared by ammonolysis reactions [J].
Paniconi, Giordano ;
Stoeva, Zlatka ;
Smith, Ronald I. ;
Dippo, Patricia C. ;
Gallagher, Bryan L. ;
Gregory, Duncan H. .
JOURNAL OF SOLID STATE CHEMISTRY, 2008, 181 (01) :158-165