Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction

被引：50

作者：

Kriegner, D. ^{[1
]}

Wintersberger, E. ^{[1
,2
]}

Kawaguchi, K. ^{[3
]}

Wallentin, J. ^{[3
]}

Borgstrom, M. T. ^{[3
]}

Stangl, J. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[2] DESY, HASYLAB, D-22607 Hamburg, Germany

[3] Lund Univ, S-22100 Lund, Sweden

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 42期

基金：

瑞典研究理事会;

关键词：

III-V NANOWIRES; INAS NANOWIRES; GAAS NANOWIRES; ZINC BLENDE; GROWTH; SUPERLATTICES; STABILITY;

D O I：

10.1088/0957-4484/22/42/425704

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.

引用

页数：7

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