Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

被引：51

作者：

Mizuno, T ^{[1
]}

Sugiyama, N ^{[1
]}

Kurobe, A ^{[1
]}

Takagi, S ^{[1
]}

机构：

[1] Toshiba Corp, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 08期

关键词：

buried-oxide; mobility; MOSFETs; SiGe; SIMOX; SOI; strained-Si;

D O I：

10.1109/16.936571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have newly developed an advanced SOI p-MOSFET with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFETs have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe him (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFETs, It is found that the hole mobility is enhanced in strained-SOI p-MOSFETs, compared to the universal hole mobility in an inversion layer and the mobility of control SOI p-MOSFETs, The enhancement of the drive current has been kept constant down to 0.3 mum of the effective channel length.

引用

页码：1612 / 1618

页数：7

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