Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubes

被引：40

作者：

Chun, Ik Su ^{[1
]}

Li, Xiuling ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2008年 / 7卷 / 04期

关键词：

gallium compounds; indium compounds; nanotechnology; semiconductor materials;

D O I：

10.1109/TNANO.2008.926372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Group III -V semiconductor nanotubes (SNTs) are formed when strained planar bilayers are released from the substrate. Compared to other nanotechnology building blocks, one of the main advantages of SNTs is the capability of precise positioning due to the top-down fabrication approach. In this letter, we demonstrate large-area assembly of ordered arras of InxGa1-xAs/GaAs nanotubes and the dispersion of their freestanding form into solution and onto foreign substrates. In addition, we systematically investigate the crystal orientation dependence of rolling behavior using a wheel configuration, which serves as a guide for assembly homogeneity. Theoretical and experimental evaluations of tube diameters are also discussed.

引用

页码：493 / 495

页数：3

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