InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays

被引：28

作者：

Chun, I. S. ^{[2
]}

Verma, V. B. ^{[1
]}

Elarde, V. C. ^{[1
]}

Kim, S. W. ^{[2
]}

Zuo, J. M. ^{[2
]}

Coleman, J. J. ^{[1
,2
]}

Li, X. ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期

关键词：

nanostructure; metalorganic chemical vapor deposition (MOCVD); semiconducting III-V materials; semiconducting gallium arsenide;

D O I：

10.1016/j.jcrysgro.2007.11.044

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Three-dimensional (3D) compound semiconductor architectures can be formed when strained semiconductor layers are released from the substrate by selective etching. These 3D nanostructures have potential applications in nanoclectronics, nanophotonics and nanomechanics. In this paper, we report on the formation of In0.2Ga0.8As/GaAs 3D structures using lithographically defined micron-size, open-ended rectangular stripe patterns on films grown by metalorganic chemical vapor deposition (MOCVD). The formation process of nanotubes with diameters smaller than theoretical values has been analyzed. Unambiguous strain direction and crystallographic orientation dependence have been demonstrated. A geometry effect with respect to the longer and shorter sides of the rectangular pattern has been observed, indicating a pathway for high-degree control over the number of turns for such tubes and their positioning by lithographically defined stripe arrays. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：2353 / 2358

页数：6

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