Photoluminescence of GaAs/AlGaAs micro-tubes containing uniaxially strained quantum wells

被引：36

作者：

Kubota, K

Vaccaro, PO

Ohtani, N

Hirose, Y

Hosoda, M

Aida, T

机构：

[1] ATR, Adapt Commun Res Labs, Seika, Kyoto 6190288, Japan

[2] Osaka City Univ, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

micro-tube; quantum well; uniaxial strain; photoluminescence;

D O I：

10.1016/S1386-9477(01)00546-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We fabricated micro-tubes containing two GaAs/AlGaAs quantum wells (QWs) in a section of the tube layer, and studied the optical properties of the embedded QWs. A multilayer structure composed of GaAs and AlGaAs layers and a lattice-mismatched InGaAs layer was epitaxially grown on a GaAs substrate by MBE. This multilayer structure rolled up by the built-in strain when it was freed from the substrate. By measuring the photoluminescence peak shift of the QWs caused by the uniaxial strain, we were able to determine the radial profile of the strain within the micro-tube wall. (C) 2002 Published by Elsevier Science B.V.

引用

页码：313 / 316

页数：4

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