Single-crystalline rocksalt CdO layers grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy

被引:29
作者
Ashrafi, ABMA [1 ]
Kumano, H
Suemune, I
Ok, YW
Seong, TY
机构
[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan
[2] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea
关键词
D O I
10.1063/1.1387258
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we report the growth of single-crystalline rocksalt CdO layers on (001) GaAs substrates using ZnS buffer layers. The growth processes of CdO layers were studied by reflection high-energy electron diffraction (RHEED), and the grown CdO layers were evaluated with atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements. After an initial growth delay, the formation of polycrystalline CdO was observed in RHEED measurements during the initial growth of very thin CdO layers. With the increase of the CdO layer thicknesses, streaky RHEED patterns were observed, which indicate the formation of single-crystalline cubic-phase CdO layers. Surface morphology of the CdO layers observed by AFM was atomically flat with root-mean-square roughness of similar to1 nm. The crystalline structures were elucidated from XRD measurements by the determination of the lattice constant to be 4.686 +/-0.001 Angstrom, indicating the single-phase rocksalt CdO structure. (C) 2001 American Institute of Physics.
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页码:470 / 472
页数:3
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