Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy

被引：11

作者：

Chen, H

Li, ZQ

Liu, HF

Wan, L

Zhang, MH

Huang, Q

Zhou, JM

Luo, Y

Han, YJ

Tao, K

Yang, N

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Tsing Hua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

[3] Tsing Hua Univ, Adv Mat Lab, Beijing 100084, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 04期

关键词：

GaN; GaAs; molecular beam epitaxy;

D O I：

10.1016/S0022-0248(99)00743-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two kinds of GaN samples were grown on GaAs(0 0 1) substrates. One is grown on nitridized GaAs surface, the other is grown on nitridized AlAs buffer GaAs substrate. X-ray diffraction and photoluminescence measurements find that the GaN sample directly grown on GaAs substrate is pure cubic phase and those grown on AlAs buffer is pure hexagonal phase. The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different buffer layers. (C) 2000 Elsevier Science B.V. All rights reserved.

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收藏

页码：811 / 814

页数：4

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