A new initial growth method for pure cubic GaN on GaAs(001)

被引：14

作者：

Chen, H

Liu, HF

Li, ZQ

Liu, S

Huang, Q

Zhou, JM ^{[1
]}

Wang, YQ

机构：

[1] Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

MBE; GaN; GaAs;

D O I：

10.1016/S0022-0248(98)01345-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new method for growing a GaN initial layer on a GaAs(0 0 1) substrate is reported. The experiments show that the optimized growth condition for a smooth GaN initial layer is to grow a two monolayer thick layer at 600 degrees C under As pressure. The pure cubic GaN films of 500 nm has been obtained on such an initial layer, the X-ray diffraction and photoluminescence show that the C-GaN film has a very high quality. There is no yellow or DA band emission of PL spectrum and the FWHM of the X-ray rocking curve is only 10 min. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

收藏

页码：336 / 340

页数：5

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