Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy

被引：35

作者：

Nakadaira, A

Tanaka, H

机构：

[1] NTT Intgd. Info. Ener. Syst. Labs., Musashino-shi, Tokyo 180, 3-9-11, Midori-cho

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 06期

关键词：

D O I：

10.1063/1.119654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A cubic GaN/AlGaN heterostructure has been grown on a GaAs (100) substrate by metalorganic vapor-phase epitaxy under low V/III ratio conditions, which resulted in a flat GaN layer. Stimulated emission was observed at 387 nm from the cleaved edge of an optically pumped cubic GaN/AlGaN heterostructure at 34 K. The threshold power density was 2.4MW/cm(2). (C) 1997 American Institute of Physics.

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页码：812 / 814

页数：3

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