Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films

被引：43

作者：

Wiesmann, D ^{[1
]}

Brener, I ^{[1
]}

Pfeiffer, L ^{[1
]}

Khan, MA ^{[1
]}

Sun, CJ ^{[1
]}

机构：

[1] APA OPT INC,BLAINE,MN 55449

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 22期

关键词：

D O I：

10.1063/1.117267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured the emission of (In,Al) GaN films under high intensity optical pumping both in the direction parallel and perpendicular to the film growth. In the edge emission geometry we determine the gain magnitude from the variable stripe length method. We use the spontaneous emission collected perpendicular to the layer plane to calculate the spectral dependence of the gain. Finally, we compare the emission spectra with those obtained for high quality GaAs thin films and find that the observation of a stimulated emission peak perpendicular to the nitride layer plane is predominantly due to scattering of the in-plane stimulated emission. (C) 1996 American Institute of Physics.

引用

页码：3384 / 3386

页数：3

共 12 条

[1] CHAO LP, IN PRESS
[2] THEORY OF LASER GAIN IN GROUP-III NITRIDES
CHOW, WW
KNORR, A
KOCH, SW
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (06) : 754 - 756
[3] Optical gain in GaInN/GaN heterostructures
Frankowsky, G
Steuber, F
Harle, V
Scholz, F
Hangleiter, A
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (26) : 3746 - 3748
[4] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS
HENRY, CH
LOGAN, RA
MERRITT, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3042 - 3050
[5] THRESHOLD ESTIMATION OF GAN-BASED SURFACE-EMITTING LASERS OPERATING IN ULTRAVIOLET SPECTRAL REGION
HONDA, T
KATSUBE, A
SAKAGUCHI, T
KOYAMA, F
IGA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (7A): : 3527 - 3532
[6] KHAN MA, 1991, APPL PHYS LETT, V58, P526, DOI 10.1063/1.104575
[7] VERTICAL-CAVITY STIMULATED-EMISSION FROM PHOTOPUMPED INGAN/GAN HETEROJUNCTIONS AT ROOM-TEMPERATURE
KHAN, MA
KRISHNANKUTTY, S
SKOGMAN, RA
KUZNIA, JN
OLSON, DT
GEORGE, T
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (05) : 520 - 521
[8] VERTICAL-CAVITY, ROOM-TEMPERATURE STIMULATED-EMISSION FROM PHOTOPUMPED GAN FILMS DEPOSITED OVER SAPPHIRE SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
KHAN, MA
OLSON, DT
VANHOVE, JM
KUZNIA, JN
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1515 - 1517
[9] SURFACE-MODE STIMULATED-EMISSION FROM OPTICALLY PUMPED GAINN AT ROOM-TEMPERATURE
KIM, ST
AMANO, H
AKASAKI, I
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (02) : 267 - 269
[10] OPTICAL GAIN OF OPTICALLY PUMPED AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE AT ROOM-TEMPERATURE
KIM, ST
AMANO, H
AKASAKI, I
KOIDE, N
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (12) : 1535 - 1536

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