SURFACE-MODE STIMULATED-EMISSION FROM OPTICALLY PUMPED GAINN AT ROOM-TEMPERATURE

被引：34

作者：

KIM, ST ^{[1
]}

AMANO, H ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] MEIJO UNIV,DEPT ELECT & ELECTR ENGN,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the surface-mode stimulated emission from optically pumped Ga0.11In0.89N at room temperature. The GaInN was deposited on the intermediate layer of GaN grown on the AlN buffer layer over sapphire substrate using horizontal metalorganic vapor phase epitaxy method. The peak wavelength and the full width at half-maximum of surface-mode stimulated emission was 406 nm and 25.6 meV, respectively, and the threshold of excitation power density was about 0.52MW/cm2.© 1995 American Institute of Physics.

引用

页码：267 / 269

页数：3

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