A model for the appearance of chevrons on RHEED patterns from InAs quantum dots

被引:33
作者
Pashley, DW [1 ]
Neave, JH
Joyce, BA
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England
[2] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, London SW7 2AY, England
[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Blackett Lab, London SW7 2BZ, England
关键词
epitaxy; faceting; gallium arsenide; indium arsenide; reflection high-energy electron diffraction (RHEED); semiconductor-semiconductor thin film structures; surface structure; morphology; roughness; and topography;
D O I
10.1016/S0039-6028(00)01114-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Reflection high energy electron diffraction patterns from quantum dots formed by depositing InAs on to GaAs(0 0 1) show pairs of streaks known as chevrons. A clear understanding of the mechanism by which chevrons are produced does not seem to exist in the literature, and both pure diffraction mechanisms and effects due to the refraction of electrons have been put forward. Scanning tunnelling microscopy has shown that these particular quantum dots have bounding surfaces which are curved, not planar. In this paper, a model is presented for the explanation of the production of chevrons from such quantum dots in terms of pure refraction effects. A method is given for determining the grazing angles of incidence of the various diffracted beams on the curved bounding surfaces of the quantum dots, and hence the refractive deviations have been calculated as a function of the direction of the incident electron beam. It is shown that the model provides a semi-quantitative explanation of the occurrence of the chevrons: (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:35 / 42
页数:8
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