On the structural origin of the photoluminescence in silicon powder produced in PECVD processes

被引：3

作者：

Costa, J

Roura, P

Canillas, A

Pascual, E

Morante, JR

Bertran, E

机构：

[1] Dept. de Fis. Apl. i Electronica, Universitat de Barcelona, E08028 Barcelona, Catalonia

[2] Departament d'Enginyeria Industrial, Universitat de Girona, E17071 Girona, Catalonia, Av. Santaló s/n

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

annealing; luminescence; nanostructures; silicon;

D O I：

10.1016/0040-6090(95)08111-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The origin of the photoluminescence (PL) emitted by silicon powder produced by plasma-enhanced chemical vapor deposition is analyzed in view of the structural changes induced by laser annealing. Both, the Raman spectra and the PL signal are qualitatively different before and after this process. It involves some degree of recrystallization which can be deduced from the Raman spectra and also from a strong emission of H-2. The analysis shows that the characteristic PL does not come from the as-grown state of the sample but from the annealed state.

引用

页码：96 / 99

页数：4

共 22 条

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