Fabrication and characterization of sub-quarter-micron MOSFET's with a copper gate electrode

被引：14

作者：

Ma, Y ^{[1
]}

Evans, DR ^{[1
]}

Nguyen, T ^{[1
]}

Ono, Y ^{[1
]}

Hsu, ST ^{[1
]}

机构：

[1] Sharp Labs Amer, Camas, WA 98607 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 05期

关键词：

CVD copper deposition; metal gate; replacement gate process; submicron MOSFET;

D O I：

10.1109/55.761031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sub-0.25-mu m P and NMOSFET's with a chemical vapor deposited copper gate electrode were fabricated using a novel nitride cast method wherein a silicon nitride gate is used as a stand-in gate which is then replaced by Cu with a PVD TIN barrier metal after source/drain formation. The maximum processing temperature after copper deposition is 400 degrees C, Excellent device performance was obtained on both P- and N-MOSFET, No signs of copper diffusion were observed after device fabrication and after bias-temperature stress tests at 200 degrees C.

引用

页码：254 / 255

页数：2

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