Structural and photoluminescence properties of thin alumina films on silicon, fabricated by electrochemistry

被引：22

作者：

Kokonou, M

Nassiopoulou, AG

Travlos, A

机构：

[1] NCSR Demokritos, IMEL, Aghia Paraskevi 15310, Greece

[2] NCSR Demokritos, Inst Mat Sci, Aghia Paraskevi 15310, Greece

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 101卷 / 1-3期

关键词：

silicon; nanocrystals; alumina; anodization; photoluminescence;

D O I：

10.1016/S0921-5107(02)00653-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Alumina thin films on a silicon substrate were fabricated by anodisation of Aluminium films, deposited by electron gun evaporation, in different acid aqueous solutions. The thickness of the initial Al film was changed in the range of 50-500 nm and its composition was either pure aluminium or aluminium with 1% silicon. The structure and properties of the obtained alumina films were extensively investigated and they were found to depend strongly on the thickness and composition of the initial aluminium layer, as well as on the acid aqueous solution used. One important result obtained from the optical characterization of the alumina films was the very bright photoluminescence (PL), which also depended on the acid aqueous solution used and the alumina film thickness. The obtained results will be discussed in detail. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：65 / 70

页数：6

共 11 条

[1] Preparation and photoluminescence of alumina membranes with ordered pore arrays [J].