Porous alumina as low-ε insulator for multilevel metallization

被引：29

作者：

Lazarouk, S

Katsouba, S

Leshok, A

Demianovich, A

Stanovski, V

Voitech, S

Vysotski, V

Ponomar, V

机构：

[1] Belarusian State Univ Informat & Radioelect, Minsk 220027, BELARUS

[2] Res & Design Co Belmicrosyst, Minsk 220600, BELARUS

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 50卷 / 1-4期

关键词：

multilevel metallization; low-epsilon material; electrochemical anodizing; porous alumina;

D O I：

10.1016/S0167-9317(99)00298-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrochemical anodizing technique was used to form an interlevel alumina insulator for multilevel aluminum metallization. The low dielectric constant of about 2.4 was reached by chemical etching of porous alumina films in anodizing solution. The interlevel insulator based on porous alumina had the following parameters measured: the breakdown voltage was more than 400 V, the leakage current at 15 V applied voltage was less than 10(-9) A/cm(2). The developed processing technique was tested for CMOS submicron technology. The fabricated aluminum-porous alumina structure demonstrated a good chemical and thermal stability, excellent adhesion to underlying and top layers. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：321 / 327

页数：7

共 7 条

[1] ANISOTROPY OF POROUS ANODIZATION OF ALUMINUM FOR VLSI TECHNOLOGY [J].