Planar aluminum interconnection formed by electrochemical anodizing technique

被引：31

作者：

Surganov, V ^{[1
]}

Mozalev, A ^{[1
]}

机构：

[1] Belarusian State Univ Informat & Radioelect, Dept Microelect, Lab Nanotechnol, Minsk 220600, BELARUS

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 37-8卷 / 1-4期

关键词：

ULSI; aluminium; anodic alumina; multilevel interconnection; planarization; electrochemical anodizing;

D O I：

10.1016/S0167-9317(97)00129-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel kind of electrochemical anodizing technique is developed to form planar multilevel aluminium interconnections of ULSI. Planarizing and interlevel anodic alumina dielectric films have good insulating properties. Data obtained show that the electrochemical anodizing technique looks promising for future applications in microelectronics production, because it is expected to improve production time significantly, simplify technological processes, decrease the number of materials used, increase device reliability and finally reduce manufacturing costs.

引用

页码：329 / 334

页数：6

共 11 条

[1]

[Anonymous], RUSS J APPL CHEM

[2]

Bohr MT, 1996, SOLID STATE TECHNOL, V39, P105

[3] A SCALABLE MULTILEVEL METALLIZATION WITH PILLAR INTERCONNECTIONS AND INTERLEVEL DIELECTRIC PLANARIZATION [J].