Enhancement in Thermoelectric Figure-Of-Merit of an N-Type Half-Heusler Compound by the Nanocomposite Approach

被引：282

作者：

Joshi, Giri ^{[2
]}

Yan, Xiao ^{[2
]}

Wang, Hengzhi ^{[2
]}

Liu, Weishu ^{[2
]}

Chen, Gang ^{[1
]}

Ren, Zhifeng ^{[2
]}

机构：

[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

[2] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

来源：

ADVANCED ENERGY MATERIALS | 2011年 / 1卷 / 04期

关键词：

STABILITY; PHASES;

D O I：

10.1002/aenm.201100126

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An enhancement in the dimensionless thermoelectric figure-of-merit (ZT) of an n-type half-Heusler material is reported using a nanocomposite approach. A peak ZT value of 1.0 was achieved at 600 degrees C-700 degrees C, which is about 25% higher than the previously reported highest value. The samples were made by ball-milling ingots of composition Hf0.75Zr0.25NiSn0.99Sb0.01 into nanopowders and hot-pressing the powders into dense bulk samples. The ingots were formed by arc-melting the elements. The ZT enhancement mainly comes from reduction of thermal conductivity due to increased phonon scattering at grain boundaries and crystal defects, and optimization of antimony doping.

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页码：643 / 647

页数：5

相关论文

共 31 条

[1] EFFECT OF POINT IMPERFECTIONS ON LATTICE THERMAL CONDUCTIVITY [J].

CALLAWAY, J ;

VONBAEYER, HC .

PHYSICAL REVIEW, 1960, 120 (04) :1149-1154

[2] The high temperature thermoelectric performances of Zr0.5Hf0.5Ni0.8Pd0.2Sn0.99Sb0.01 alloy with nanophase inclusions [J].

Chen, LD ;

Huang, XY ;

Zhou, M ;

Shi, X ;

Zhang, WB .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (06)

[3] (Zr,Hf)Co(Sb,Sn) half-Heusler phases as high-temperature (>700 °C) p-type thermoelectric materials [J].

Culp, Slade R. ;

Simonson, J. W. ;

Poon, S. Joseph ;

Ponnambalam, V. ;

Edwards, J. ;

Tritt, Terry M. .

APPLIED PHYSICS LETTERS, 2008, 93 (02)

[4] Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C -: art. no. 042106 [J].

Culp, SR ;

Poon, SJ ;

Hickman, N ;

Tritt, TM ;

Blumm, J .

APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3

[5] New directions for low-dimensional thermoelectric materials [J].

Dresselhaus, Mildred S. ;

Chen, Gang ;

Tang, Ming Y. ;

Yang, Ronggui ;

Lee, Hohyun ;

Wang, Dezhi ;

Ren, Zhifeng ;

Fleurial, Jean-Pierre ;

Gogna, Pawan .

ADVANCED MATERIALS, 2007, 19 (08) :1043-1053

[6] Enhancement of thermoelectric efficiency in PbTe by distortion of the electronic density of states [J].

Heremans, Joseph P. ;

Jovovic, Vladimir ;

Toberer, Eric S. ;

Saramat, Ali ;

Kurosaki, Ken ;

Charoenphakdee, Anek ;

Yamanaka, Shinsuke ;

Snyder, G. Jeffrey .

SCIENCE, 2008, 321 (5888) :554-557

[7] Cubic AgPbmSbTe2+m:: Bulk thermoelectric materials with high figure of merit [J].

Hsu, KF ;

Loo, S ;

Guo, F ;

Chen, W ;

Dyck, JS ;

Uher, C ;

Hogan, T ;

Polychroniadis, EK ;

Kanatzidis, MG .

SCIENCE, 2004, 303 (5659) :818-821

[8] Enhanced Thermoelectric Figure-of-Merit in Nanostructured p-type Silicon Germanium Bulk Alloys [J].

Joshi, Giri ;

Lee, Hohyun ;

Lan, Yucheng ;

Wang, Xiaowei ;

Zhu, Gaohua ;

Wang, Dezhi ;

Gould, Ryan W. ;

Cuff, Diana C. ;

Tang, Ming Y. ;

Dresselhaus, Mildred S. ;

Chen, Gang ;

Ren, Zhifeng .

NANO LETTERS, 2008, 8 (12) :4670-4674

[9] Thermoelectric properties of p-type half-Heusler compound HfPtSn and improvement for high-performance by Ir and Co additions [J].

Kimura, Yoshisato ;

Zama, Akihisa .

APPLIED PHYSICS LETTERS, 2006, 89 (17)

[10] Temperature dependence of thermoelectric properties of Ni-doped CoSb3 [J].

Kitagawa, H ;

Wakatsuki, M ;

Nagaoka, H ;

Noguchi, H ;

Isoda, Y ;

Hasezaki, K ;

Noda, Y .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2005, 66 (10) :1635-1639

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