Thermoelectric properties of p-type half-Heusler compound HfPtSn and improvement for high-performance by Ir and Co additions

被引:48
作者
Kimura, Yoshisato [1 ]
Zama, Akihisa [1 ]
机构
[1] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan
关键词
D O I
10.1063/1.2364721
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors found that the half-Heusler compound HfPtSn exhibits p-type thermoelectric behavior, contrary to the HfNiSn counterpart with the same valence electron count of 18 showing n-type behavior. Nearly single crystals of HfPtSn were fabricated using optical floating zone melting method. HfPtSn shows large thermoelectric power while its electrical resistivity and thermal conductivity are relatively high. They improved p-type thermoelectric properties of HfPtSn by the additions of Ir and Co for the Pt site. It aims not only to optimize carrier concentrations but also to suppress an increase in thermal conduction by reducing the lattice contribution through the solid solution effects. (c) 2006 American Institute of Physics.
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页数:3
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共 20 条
[1]   LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES [J].
ABELES, B .
PHYSICAL REVIEW, 1963, 131 (05) :1906-&
[2]   GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].
ALIEV, FG ;
BRANDT, NB ;
MOSHCHALKOV, VV ;
KOZYRKOV, VV ;
SKOLOZDRA, RV ;
BELOGOROKHOV, AI .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02) :167-171
[3]   Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys [J].
Bhattacharya, S ;
Tritt, TM ;
Xia, Y ;
Ponnambalam, V ;
Poon, SJ ;
Thadhani, N .
APPLIED PHYSICS LETTERS, 2002, 81 (01) :43-45
[4]   Electronic structure and thermopower of Ni(Ti0.5Hf0.5)Sn and related half-Heusler phases -: art. no. 045121 [J].
Chaput, L ;
Tobola, J ;
Pécheur, P ;
Scherrer, H .
PHYSICAL REVIEW B, 2006, 73 (04)
[5]  
FISTUL VI, 1969, HEAVILY DOPED SEMICO, V1, P77
[6]  
HAYASHI Y, 2004, P TMS S ADV MAT EN C, V2, P367
[7]   Efficient dopants for ZrNiSn-based thermoelectric materials [J].
Hohl, H ;
Ramirez, AP ;
Goldmann, C ;
Ernst, G ;
Wölfing, B ;
Bucher, E .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) :1697-1709
[8]   New compounds with MgAgAs-type structure: NbIrSn and NbIrSb [J].
Hohl, H ;
Ramirez, AP ;
Goldmann, C ;
Ernst, G ;
Wolfing, B ;
Bucher, E .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (35) :7843-7850
[9]   The effects of quaternary additions on thermoelectric properties of TiNiSn-based half-Heusler alloys [J].
Katayama, T ;
Kim, SW ;
Kimura, Y ;
Mishima, Y .
JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (11) :1160-1165
[10]   Effect of substitution for Ni by Co and/or Cu on the thermoelectric properties of half-Heusler ZrNiSn [J].
Katsuyama, S ;
Matsushima, H ;
Ito, M .
JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 385 (1-2) :232-237