Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

被引：39

作者：

Harjuoja, J ^{[1
]}

Kosola, A ^{[1
]}

Putkonen, M ^{[1
]}

Niinistö, L ^{[1
]}

机构：

[1] Aalto Univ, Inorgan & Analyt Chem Lab, FIN-02015 Espoo, Finland

来源：

THIN SOLID FILMS | 2006年 / 496卷 / 02期

关键词：

lead titanate; atomic layer deposition;

D O I：

10.1016/j.tsf.2005.09.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lead titanate thin films were deposited by atomic layer deposition on Si(100) using Ph4Pb and Ti(O-i-Pr)(4) as metal precursors and O-3 and H2O as oxygen sources. The influence of the Ti:Pb precursor pulsing ratio on the film growth, stoichiometry and quality was studied at two different temperatures, i.e. 250 and 300 degrees C. Uniform and stoichiometric films were obtained using a Ti: Pb precursor pulsing ratio of I : 10 at 250 degrees C or 1 :28 at 300 degrees C. The as-deposited films were amorphous but the crystalline PbTiO3 phase was obtained by rapid thermal annealing at 600-900 degrees C both in N-2 and O-2 ambient. Thin PbTiO3 films were visually uniform and roughness values for as-deposited and annealed films were observed by atomic force microscopy. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：346 / 352

页数：7

共 69 条

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