Surface, interface and valence band structures of ultra-thin silicon oxides

被引：15

作者：

Hattori, T ^{[1
]}

机构：

[1] Musashi Inst Technol, Dept Elect & Elect Engn, Setagaya Ku, Tokyo 158, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

silicon oxide; interface structure; surface microroughness; valence band discontinuity; XPS; AFM;

D O I：

10.1016/S0169-4332(98)00043-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The studies on surface, interface and valence band structures of ultra-thin silicon oxides at the initial stage of oxidation are reviewed. It will be shown that the surface and valence band structures of ultra-thin oxides are affected by the interface structures. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：156 / 164

页数：9

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