Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise

被引：79

作者：

Yang, W ^{[1
]}

Nohova, T ^{[1
]}

Krishnankutty, S ^{[1
]}

Torreano, R ^{[1
]}

McPherson, S ^{[1
]}

Marsh, H ^{[1
]}

机构：

[1] Honeywell Technol Ctr, Plymouth, MN 55441 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Back-illuminated GaN/AlGaN ultraviolet (UV) heterojunction photodiodes with high quantum efficiencies are demonstrated. Photovoltaic (zero bias) responsivity of 0.2 A/W at 355 nm was achieved. The improved efficiencies primarily arise from the use of AlGaN/GaN heterojunction in which photons are absorbed within the p-n junction thus eliminates carrier losses due to surface recombination and diffusion processes in previously reported homojunction devices. Very high dark impedance and large visible rejection ratio were obtained. These results indicate high quality GaN/AlGaN interface and efficient photocarrier collection in the photodiode. (C) 1998 American Institute of Physics. [S0003-6951(98)00534-8].

引用

页码：1086 / 1088

页数：3

共 8 条

[1] Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures [J].