Depth profiling of GaN by cathodoluminescence microanalysis

被引：73

作者：

Fleischer, K

Toth, M

Phillips, MR ^{[1
]}

Zou, J

Li, G

Chua, SJ

机构：

[1] Univ Technol Sydney, Microstruct Anal Unit, Broadway, NSW 2007, Australia

[2] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[3] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 08期

关键词：

D O I：

10.1063/1.123460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire. Depth-resolved CL analysis can be used for depth profiling of the yellow luminescence (YL) center concentration which was found to increase with depth. The results are consistent with the (O-N - V-Ga)(2-) complex model of YL centers [J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996) and T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1996)]. Depth profiling of the near-edge emission in GaN layers thicker than similar to 0.5 mu m is not possible due to strong self-absorption. (C) 1999 American Institute of Physics. [S0003-6951(99)04108- X].

引用

页码：1114 / 1116

页数：3

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