Structural fingerprints of electronic change in the phase-change-material: Ge2Sb2Te5

被引：10

作者：

Cai, B. ^{[1
]}

Drabold, D. A. ^{[1
]}

Elliott, S. R. ^{[2
]}

机构：

[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA

[2] Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期

关键词：

B.C. would like to thank Dr. J. Hegedus for an introduction to this area. This work was partly supported by the U.S. NSF under Grant Nos. DMR-09033225 and DMR-0844014;

D O I：

10.1063/1.3516039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we generate a-Ge2Sb2Te5 models via ab initio molecular dynamic simulations, track the dynamic changes of network at 500 K, and correlate the structural changes in the course of the simulation with changes in electronic structure. Considerable fluctuations of the electronic gap are observed even for a model in equilibrium. We compare our study to experiments and other simulations. (C) 2010 American Institute of Physics. [doi:10.1063/1.3516039]

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页数：3

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