Minority carrier behavior in silicon - Measurement results derived from the Shockley-Haynes experiment

被引：4

作者：

Kruger, B ^{[1
]}

Friese, T ^{[1
]}

ElRatel, F ^{[1
]}

Sharabati, W ^{[1
]}

Wagemann, HG ^{[1
]}

机构：

[1] HAHN MEITNER INST BERLIN GMBH,DH,D-14109 BERLIN,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 06期

关键词：

D O I：

10.1016/0038-1101(95)00407-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behavior of minority carriers in silicon MOS structures has been investigated experimentally. For this purpose a Shockley-Haynes measurement set-up was adapted to MOS structures. By choosing the accumulation regime of the MOS structure, the minority carriers are kept away from the surface and their bulk properties apply. Five n-type and p-type samples with substrate doping concentrations in the range N-sub = 10(15)-1.2 x 10(17) cm(-3) were measured. In addition the drift field was varied in the range E = 5-100 V cm(-1) and the temperature was varied in the range T = 88-423 K. Using a dedicated evaluation strategy we have simultaneously determined the bulk values of the minority carrier mobility mu, the diffusion coefficient D, and the lifetime tau, the values of which are presented as a function of temperature and field strength, with the inherent error.

引用

页码：897 / 900

页数：4

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