Scanning tunneling spectroscopy of Mott-Hubbard states on the 6H-SiC(0001)√3x√3 surface

被引：95

作者：

Ramachandran, V ^{[1
]}

Feenstra, RM ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.82.1000

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling spectra have been measured on the 6H-SiC(0001) root 3 x root 3 surface for both p- and n-type materials. With the use of exceptionally low tunnel currents, the tunneling spectra reveal distinct bands of empty and filled states, separated by 2.0 eV. The states are located at the same spatial position, thereby supporting a silicon adatom model which predicts a Mott-Hubbard-type density of states.

引用

页码：1000 / 1003

页数：4

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