Filtered cathodic vacuum arc (FCVA) deposition of thin film silicon

We describe the deposition of both amorphous and microcrystalline silicon films using a filtered cathodic vacuum arc (FCVA) system. The films were grown at deposition rates of between 0.2 and 4 nm s(-1) with substrate temperatures between room temperature and 500 degrees C. DC substrate biases of 0 to-100 V were used. The microstructures of films grown in this parameter space have been examined using st combination of TEM, XRD, RES and EELS. Optical and electronic properties have been investigated using transmission spectroscopy and gap cell probe measurements. Films with similar to 100 nm crystallites were obtained at moderate temperature and bias (e.g. similar to 300 degrees C and -50 V). Although these conditions are similar to those used in PECVD reactors [1] to produce microcrystalline films the growth mechanism is quite different as the precursors are silicon ions rather than hydrides and no hydrogen dilution is required.