Atomic hydrogen cleaning of GaAs(001): a scanning tunnelling microscopy study

被引：37

作者：

Khatiri, A

Ripalda, JM

Krzyzewski, TJ

Bell, GR

McConville, CF

Jones, TS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AZ, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

SURFACE SCIENCE | 2004年 / 548卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

gallium arsenide; hydrogen atom; scanning tunneling microscopy; surface structure; morphology; roughness; and topography; epitaxy;

D O I：

10.1016/j.susc.2003.11.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reflection high-energy electron diffraction and scanning tunnelling microscopy have been used to study the cleaning of the native oxide from an epi-ready GaAs(001) substrate using thermally cracked atomic hydrogen (AH). Cleaning at 400 degreesC results in the formation of a (2 x 4) reconstructed As-terminated surface. A short anneal (5 min) under an As-2 flux at 600 degreesC produces an atomically smooth surface, which is comparable in quality to that obtained after conventional substrate preparation by thermal oxide removal and prolonged homoepitaxial buffer growth. Our results show that AH cleaning is a very effective method for preparing clean GaAs(001) surfaces for use in an epitaxial growth environment without any further treatment. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：L1 / L6

页数：6

共 16 条

[1] Effect of the starting surface on the morphology of MBE-grown GaAs [J].