Superconformal electrodeposition in submicron features

被引:153
作者
Josell, D [1 ]
Wheeler, D [1 ]
Huber, WH [1 ]
Moffat, TP [1 ]
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
关键词
D O I
10.1103/PhysRevLett.87.016102
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Superconformal electrodeposition is explained based on a local growth velocity that increases with coverage of a catalytic species adsorbed on the copper-electrolyte interface. For dilute concentration of the catalyst precursor in the electrolyte, local coverage in fine features changes more due to interface area change than by accumulation from the electrolyte, yielding superconformal growth. The model is supported by experiments and simulations of copper deposition in 350-100 nm wide features, helping to explain the influence of adsorbates on roughness evolution.
引用
收藏
页码:1 / 016102
页数:4
相关论文
共 10 条
[1]   Damascene copper electroplating for chip interconnections [J].
Andricacos, PC ;
Uzoh, C ;
Dukovic, JO ;
Horkans, J ;
Deligianni, H .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1998, 42 (05) :567-574
[2]  
Bard A. J., 1980, ELECTROCHEMICAL METH
[3]   Self-assembly of n-alkanethiols:: A kinetic study by second harmonic generation [J].
Dannenberger, O ;
Buck, M ;
Grunze, M .
JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (12) :2202-2213
[4]  
DELIGIANNI H, 2000, P INT S EL PROC ULSI, V999, P52
[5]   Sticking probabilities in adsorption from liquid solutions: Alkylthiols on gold [J].
Jung, LS ;
Campbell, CT .
PHYSICAL REVIEW LETTERS, 2000, 84 (22) :5164-5167
[6]   Superconformal electrodeposition of copper in 500-90 nm features [J].
Moffat, TP ;
Bonevich, JE ;
Huber, WH ;
Stanishevsky, A ;
Kelly, DR ;
Stafford, GR ;
Josell, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (12) :4524-4535
[7]  
REID J, 2000, P ADV MET C 1999 MAT, P53
[8]  
RICHARD E, 2000, P ADV MET C 1999, P149
[9]  
RITZDORF T, 2000, P ADV MET C 1999, P101
[10]   Theory of filling of high-aspect ratio trenches and vias in presence of additives [J].
West, AC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (01) :227-232