The role of surface roughness on the electron confinement in semiconductor quantum rings

被引：8

作者：

Chaves, A. ^{[1
]}

Costa e Silva, J. ^{[1
]}

Freire, J. A. K. ^{[1
]}

Farias, G. A. ^{[1
]}

机构：

[1] Univ Fed Ceara, Dept Fis, BR-60455900 Fortaleza, Ceara, Brazil

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 3-4期

关键词：

interface roughness; quantum rings; Aharonov-Bohm effect;

D O I：

10.1016/j.mejo.2007.07.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron energy spectrum of GaAsAl0.30Ga0.70As quantum rings under applied magnetic fields is calculated, taking into account the existence of rough interfaces between materials. The Schrodinger equation, within the effective mass approximation, is solved in a realistic model, not limited to small perturbations. Our numerical results show that the existence of roughness on the ring surface modifies significantly the electron confinement energy, lifts the degeneracy of the electron angular momentum transition points of the Aharonov-Bohm oscillations, and in some special cases, it can even suppress the ground state energy oscillations. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：455 / 458

页数：4

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