Self-assembly of concentric quantum double rings

被引:376
作者
Mano, T
Kuroda, T
Sanguinetti, S
Ochiai, T
Tateno, T
Kim, J
Noda, T
Kawabe, M
Sakoda, K
Kido, G
Koguchi, N
机构
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi 3310012, Japan
[3] Univ Milano Bicocca, INFM, I-20125 Milan, Italy
[4] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy
关键词
D O I
10.1021/nl048192+
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.
引用
收藏
页码:425 / 428
页数:4
相关论文
共 22 条
[1]   Identification of atomic-like electronic states in indium arsenide nanocrystal quantum dots [J].
Banin, U ;
Cao, YW ;
Katz, D ;
Millo, O .
NATURE, 1999, 400 (6744) :542-544
[2]   Coupling and entangling of quantum states in quantum dot molecules [J].
Bayer, M ;
Hawrylak, P ;
Hinzer, K ;
Fafard, S ;
Korkusinski, M ;
Wasilewski, ZR ;
Stern, O ;
Forchel, A .
SCIENCE, 2001, 291 (5503) :451-453
[4]  
Bimberg D., 1999, QUANTUM DOT HETEROST
[5]   Presentation and experimental validation of a single-band, constant-potential model for self-assembled InAs/GaAs quantum dots [J].
Califano, M ;
Harrison, P .
PHYSICAL REVIEW B, 2000, 61 (16) :10959-10965
[6]   Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].
García, JM ;
MedeirosRibeiro, G ;
Schmidt, K ;
Ngo, T ;
Feng, JL ;
Lorke, A ;
Kotthaus, J ;
Petroff, PM .
APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016
[7]   NEW MBE GROWTH METHOD FOR INSB QUANTUM-WELL BOXES [J].
KOGUCHI, N ;
TAKAHASHI, S ;
CHIKYOW, T .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :688-692
[8]   GROWTH OF GAAS EPITAXIAL MICROCRYSTALS ON AN S-TERMINATED GAAS SUBSTRATE BY SUCCESSIVE IRRADIATION OF GA AND AS MOLECULAR-BEAMS [J].
KOGUCHI, N ;
ISHIGE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (5A) :2052-2058
[9]   Picosecond nonlinear relaxation of photoinjected carriers in a single GaAs/Al0.3Ga0.7As quantum dot -: art. no. 121302 [J].
Kuroda, T ;
Sanguinetti, S ;
Gurioli, M ;
Watanabe, K ;
Minami, F ;
Koguchi, N .
PHYSICAL REVIEW B, 2002, 66 (12) :1213021-1213024
[10]   DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].
LEONARD, D ;
KRISHNAMURTHY, M ;
REAVES, CM ;
DENBAARS, SP ;
PETROFF, PM .
APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205