Picosecond nonlinear relaxation of photoinjected carriers in a single GaAs/Al0.3Ga0.7As quantum dot -: art. no. 121302

被引：51

作者：

Kuroda, T ^{[1
]}

Sanguinetti, S

Gurioli, M

Watanabe, K

Minami, F

Koguchi, N

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

[2] Univ Milano Bicocca, INFM, I-20125 Milan, Italy

[3] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[4] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.66.121302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoemission from a single self-organized GaAs/Al0.3Ga0.7As quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive relaxation of multiexcitons. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intradot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.

引用

页码：1213021 / 1213024

页数：4

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