MoO3 doped 4,4′-N,N′-dicarbazole-biphenyl for low voltage organic light emitting diodes

被引:24
作者
Qiu, J. [1 ]
Wang, Z. B. [1 ]
Helander, M. G. [1 ]
Lu, Z. H. [1 ,2 ]
机构
[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
[2] Yunnan Univ, Dept Phys, Kunming 650091, Peoples R China
基金
加拿大自然科学与工程研究理事会;
关键词
MOLYBDENUM TRIOXIDE; OXIDE; LAYER;
D O I
10.1063/1.3644159
中图分类号
O59 [应用物理学];
学科分类号
摘要
MoO3 doped 4,4'-N,V-dicarbazole-biphenyl (CBP) was found to provide significantly reduced driving voltage when used as a hole transport layer (HTL) in organic light emitting diodes (OLEDs). Up to 70% improvement in power efficiency was realized in a fluorescent green OLED when MoO3 doped CBP was used in place of the traditional N,V-diphenyi-N,V-his-(1-naphthyl)1-1'-biphenyl-4,4'-diamine (alpha-NPD) HTL. It is also found that the hole injection across the CBP:MoO3/CBP interface is dependent on the CBP:MoO3 layer thickness. Therefore, the hole injection can be engineered by tuning the doping thickness which is useful for optimizing the election hole balance (C) 2011 American Institute of Physics. [doi:10.1063/1.3644159]
引用
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页数:3
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