Reversible defect engineering of single-walled carbon nanotubes using scanning tunneling microscopy

被引:36
作者
Berthe, Maxime [1 ,4 ]
Yoshida, Shoji [1 ]
Ebine, Yuta [1 ]
Kanazawa, Ken [1 ]
Okada, Arifumi [1 ]
Taninaka, Atsushi [1 ]
Takeuchi, Osamu [1 ]
Fukui, Nobuyuki [2 ]
Shinohara, Hisanori [2 ]
Suzuki, Satoru [3 ]
Sumitomo, Koji [3 ]
Kobayashi, Yoshihiro [3 ]
Grandidier, Bruno [4 ]
Stievenard, Didier [4 ]
Shigekawa, Hidemi [1 ]
机构
[1] Univ Tsukuba, CREST, Inst Phys Appl, Tsukuba, Ibaraki 3058573, Japan
[2] Nagoya Univ, Dept Chem, Nagoya, Aichi 464862, Japan
[3] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[4] Inst Super Elect N, CNRS, Inst Elect Microelectron & nanotechnol, IEMN, F-59046 Lille, France
关键词
D O I
10.1021/nl071845c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The experimental creation and annihilation of defects on single-walled carbon nanotubes (SWCNT) with the tip of a scanning tunneling microscope are reported. The technique used to manipulate the wall structure of a nanotube at the atomic scale consists of a voltage ramp applied at constant tunneling current between the tip and the nanotube adsorbed on a gold substrate. While topographic images show an interference pattern at the defect position, spatially resolved tunneling spectroscopy reveals the presence of localized states in the band gap of the nanotube. Removal of the defect by the same procedure demonstrates the reversibility of the process. Such a precise control in the local modification of the nanotube wall opens up new opportunities to tailor SWCNT electronic properties at will.
引用
收藏
页码:3623 / 3627
页数:5
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