Identifying defects in nanoscale materials

被引:71
作者
Ishigami, M
Choi, HJ
Aloni, S
Louie, SG
Cohen, ML
Zettl, A [1 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Korea Inst Adv Study, Seoul 130722, South Korea
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.93.196803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have developed a novel iterative experimental-theoretical technique which can identify the atomic structure of defects in many-atom nanoscale materials from scanning tunneling microscopy and spectroscopy data. A given model for a defect structure is iteratively improved until calculated microscopy and spectroscopy data based on the model converge on the experimental results. We use the technique to identify a defect responsible for the electronic properties of a carbon nanotube intramolecular junction. Our technique can be extended for analysis of defect structures in nanoscale materials in general.
引用
收藏
页码:196803 / 1
页数:4
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