Fabrication of PbZrxTi1-xO3 films on Si structures using Y2O3 buffer layers

被引：50

作者：

Park, BE ^{[1
]}

Shouriki, S ^{[1
]}

Tokumitsu, E ^{[1
]}

Ishiwara, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9B期

关键词：

ferroelectric; MFIS (metal-ferroelectric-insulator-semiconductor); PZT (PbZrxTi1-xO3); Y2O3; Si; buffer layer; C-V characteristics;

D O I：

10.1143/JJAP.37.5145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lead-zirconate-titanate (PbZrxTi1-xO3:PZT) films were epitaxially grown on Si(lll)substrates using Y2O3 buffer layers. Y2O3 layers were prepared in a molecular beam epitaxy (MBE) apparatus with a single electron beam gun, while PZT films were prepared in a vacuum evaporation chamber with both a crucible and an electron beam gun. It was found from in situ RHEED observation that Y2O3 layers grew epitaxially on Si(lll) substrates. It was also found from X-ray diffraction analysis that strongly (101)-oriented PZT films grew on the Y2O3/Si(111) structures at a substrate temperature of 700 degrees C. Metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using this structure, and capacitance-voltage (C-V) curves showed a memory window of about 2.6 V, which is considered to be due to the ferroelectric nature of the PZT film.

引用

页码：5145 / 5149

页数：5

共 19 条

[1]

Brown WL., 1957, US Patent, Patent No. 2791759

[2] STUDY OF THERMALLY OXIDIZED YTTRIUM FILMS ON SILICON [J].

GURVITCH, M ;

MANCHANDA, L ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :919-921

[3] MFS FET - NEW TYPE OF NON-VOLATILE MEMORY SWITCH USING PLZT FILM [J].

HIGUMA, Y ;

MATSUI, Y ;

OKUYAMA, M ;

NAKAGAWA, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :209-214

[4] CHARACTERIZATION OF METAL FERROELECTRIC INSULATOR SEMICONDUCTOR STRUCTURE WITH CEO2 BUFFER LAYER [J].

HIRAI, T ;

TERAMOTO, K ;

NAGASHIMA, K ;

KOIKE, H ;

TARUI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A) :4163-4166

[5] PROPOSAL OF ADAPTIVE-LEARNING NEURON CIRCUITS WITH FERROELECTRIC ANALOG-MEMORY WEIGHTS [J].

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B) :442-446

[6] Proposal of a single-transistor-cell-type ferroelectric memory using an SOI structure and experimental study on the interference problem in the write operation [J].

Ishiwara, H ;

Shimamura, T ;

Tokumitsu, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1655-1658

[7] PROCESS INTEGRATION OF THE FERROELECTRIC MEMORY FETS (FEMFETS) FOR NDRO FERRAM [J].

LAMPE, DR ;

ADAMS, DA ;

AUSTIN, M ;

POLINSKY, M ;

DZIMIANSKI, J ;

SINHAROY, S ;

BUHAY, H ;

BRABANT, P ;

LIU, YM .

FERROELECTRICS, 1992, 133 (1-4) :61-72

[8]

Looney DH., 1957, US Patent, Patent No. 2791758

[9] ROLES OF BUFFER LAYERS IN EPITAXIAL-GROWTH OF SRTIO(3) FILMS ON SILICON SUBSTRATES [J].

MOON, BK ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A) :1472-1477

[10]

Morton J. A., 1957, US patent, Patent No. 2791761

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