Evidence of the Meyer-Neldel rule in InGaAsN alloys and the problem of determining trap capture cross sections

被引:25
作者
Johnston, SW [1 ]
Crandall, RS
Yelon, A
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Ecole Polytech Montreal, Montreal, PQ H3C 3A7, Canada
关键词
D O I
10.1063/1.1596713
中图分类号
O59 [应用物理学];
学科分类号
摘要
Deep-level transient spectroscopy measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown and annealed metalorganic chemical-vapor-deposited and molecular-beam-epitaxy samples with varying composition were studied. We observed a deep hole trap with activation energy ranging between 0.5 and 0.8 eV in all samples. The data clearly obey the Meyer-Neldel rule (MNR) with an isokinetic temperature of 350 K. We show that great care must be used in extracting capture cross sections (sigma) from materials that obey the MNR. In fact, we argue that it is probably not possible to determine sigma from the detrapping rate alone. One must measure both trapping and detrapping rates. (C) 2003 American Institute of Physics.
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页码:908 / 910
页数:3
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