Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures

被引：4

作者：

Mazzer, M

De Giorgi, M

Cingolani, R

Porello, G

Rossi, F

Molinari, E

机构：

[1] CNR, Ist Nuovi Mat Elettron, I-73100 Lecce, Italy

[2] Univ Lecce, Dipartimento Sci Mat, Ist Nazl Fis Mat, I-73100 Lecce, Italy

[3] Univ Modena, Dipartimento Fis, Ist Nazl Fis Mat, I-41100 Modena, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.368517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130-140 meV are predicted for suitably designed II-VI/III-V and III-V/III-V heterostructures. (C) 1998 American Institute of Physics. [S0021-8979(98)02219-1].

引用

页码：3437 / 3441

页数：5

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