STRAIN-INDUCED QUANTUM DOTS BY SELF-ORGANIZED STRESSORS

被引：81

作者：

SOPANEN, M ^{[1
]}

LIPSANEN, H ^{[1
]}

AHOPELTO, J ^{[1
]}

机构：

[1] TECH RES CTR FINLAND,ELECTR,SF-02150 ESPOO,FINLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Novel in situ method to produce quantum dots is reported. Three-dimensional confinement of carriers to a GaInAs/GaAs quantum well dots is observed by photoluminescence. The confinement potential is induced by stressors, formed by self-organizing growth of InP nanoscale islands on top barrier GaAs surface. Two transitions arising from the strain-induced quantum dots produced by two types of InP islands are identified. The luminescence from higher electronic states of the quantum dots having a level splitting of 8 meV is also observed.© 1995 American Institute of Physics.

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页码：2364 / 2366

页数：3

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