A photoelectrochemical study of the GdMg hydride switchable mirror

被引:3
作者
Di Vece, M [1 ]
van der Sluis, P
Janner, AM
Kelly, JJ
机构
[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands
[2] Philips Res, NL-5656 AA Eindhoven, Netherlands
关键词
D O I
10.1149/1.1401081
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A significant chemical stability has allowed us to perform photoelectrochemical measurements on the semiconducting state of the GdMg hydride system. With electrical impedance spectroscopy we confirm that GdMg hydride in the transparent state is an a-type semiconductor. The donor density was estimated to be 5 x 10(21) cm(-3). Impedance measurements give information about the potential distribution at the semiconductor/solution interface. Photocurrent was observed in the transparent state. It is proposed that photoanodic etching of the GdMg hydride at high light intensities occurs along grain boundaries, leading to inhomogeneous destruction of the film, (C) 2001 The Electrochemical Society.
引用
收藏
页码:G576 / G580
页数:5
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