Quantum-well states in ultrathin aluminium films on Si(111)

被引：32

作者：

Aballe, L

Rogero, C

Gokhale, S

Kulkarni, S

Horn, K

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Univ Poona, Dept Phys, Pune 411007, Maharashtra, India

来源：

SURFACE SCIENCE | 2001年 / 482卷

关键词：

angle resolved photoemission; epitaxy; quantum effects; aluminum; silicon; low index single crystal surfaces;

D O I：

10.1016/S0039-6028(01)00845-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Investigations of the thickness dependent electronic structure of ultrathin aluminium films deposited on Si(1 1 1) 7 x 7 using angle resolved photoelectron spectroscopy show the first experimental observation of quantum-well states in this system. Deposition at 100 K favours an abrupt and homogeneous interface and the growth of an epitaxial, quasi two-dimensional Al(1 1 1) overlayer of good crystalline quality, making possible the observation of overlayer states for thicknesses up to 30 Al monolayers. We obtain the decay length of the Al(1 1 1) surface state as well as the energy-dependent phase shift of the electron waves at the Al/Si interface. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：488 / 494

页数：7

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