Effect of non-diamond carbon etching on the field emission property of highly sp2 bonded nanocrystalline diamond films

被引：13

作者：

Shim, JY ^{[1
]}

Baik, HK ^{[1
]}

机构：

[1] Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea

来源：

DIAMOND AND RELATED MATERIALS | 2001年 / 10卷 / 3-7期

关键词：

field emission; diamond; non-diamond; triple junction;

D O I：

10.1016/S0925-9635(01)00378-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the non-diamond carbon etching on the electron field emission behavior of highly sp(2) bonded nanocrystalline diamond films has been systematically investigated by performing hydrogen treatments. Field emission properties and emission patterns of the films are initially enhanced and then degraded with an increase in the hydrogen treatment time. The most uniform distribution of the emission site is obtained for a 1-min hydrogen-treated film, and the reason for this is explained in terms of the increase of triple junction site due to etching of the sp(2) bonded carbon by atomic hydrogen. On the other hand, the degraded emission property of the films treated for more than 10 min is due to the decrease of triple junction, which is indirectly confirmed by Raman and Anger electron spectroscopy. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：847 / 851

页数：5

相关论文

共 15 条

[1] Electron affinity and Schottky barrier height of metal-diamond (100), (111), and (110) interfaces [J].

Baumann, PK ;

Nemanich, RJ .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2072-2082

[2] ELECTRON FIELD-EMISSION FROM DIAMOND AND OTHER CARBON MATERIALS AFTER H-2, O-2 AND CS TREATMENT [J].

GEIS, MW ;

TWICHELL, JC ;

MACAULAY, J ;

OKANO, K .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1328-1330

[3] X-ray absorption and Auger electron spectroscopy studies of the quality of diamond thin films grown by the oxy-acetylene flame method [J].

Gutierrez, A ;

Lopez, MF ;

Garcia, I ;

Vazquez, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (02) :294-297

[4] QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].

HIMPSEL, FJ ;

KNAPP, JA ;

VANVECHTEN, JA ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1979, 20 (02) :624-627

[5] Electron field emission from thin fine-grained CVD diamond films [J].

Lacher, F ;

Wild, C ;

Behr, D ;

Koidl, P .

DIAMOND AND RELATED MATERIALS, 1997, 6 (09) :1111-1116

[6] PREPARATION OF DIAMOND-LIKE CARBON-FILMS BY ELECTRON-CYCLOTRON RESONANCE CHEMICAL VAPOR-DEPOSITION [J].

NAGAI, I ;

ISHITANI, A ;

KURODA, H ;

YOSHIKAWA, M ;

NAGAI, N .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) :2890-2893

[7] THE DIAMOND SURFACE - ATOMIC AND ELECTRONIC-STRUCTURE [J].

PATE, BB .

SURFACE SCIENCE, 1986, 165 (01) :83-142

[8] DIAMOND SYNTHESIS FROM VAPOR-PHASE AND ITS GROWTH-PROCESS [J].

SETAKA, N .

JOURNAL OF MATERIALS RESEARCH, 1989, 4 (03) :664-670

[9] Structural, optical, and field emission properties of hydrogenated amorphous carbon films grown by helical resonator plasma enhanced chemical vapor deposition [J].

Shim, JY ;

Chi, EJ ;

Baik, HK ;

Lee, SM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02) :440-444

[10] Mechanism of field emission from chemical vapor deposited undoped polycrystalline diamond films [J].

Shim, JY ;

Baik, HK ;

Song, KM .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (10) :7508-7518