Room-temperature observation of multiple negative differential resistance in a metal (CoSi2)/insulator (CaF2) quantum interference transistor structure

被引：5

作者：

Mori, K ^{[1
]}

Saitoh, W ^{[1
]}

Suemasu, T ^{[1
]}

Kohno, Y ^{[1
]}

Watanabe, M ^{[1
]}

Asada, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, DEPT ELECT & ELECT ENGN, MEGURO KU, TOKYO 152, JAPAN

来源：

PHYSICA B-CONDENSED MATTER | 1996年 / 227卷 / 1-4期

关键词：

metal-insulator heterostructure; quantum interference transistor;

D O I：

10.1016/0921-4526(96)00402-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the room-temperature observation of multiple negative differential resistance (NDR) due to quantum interference of hot electrons in a metal (CoSi2)/insulator (CaF2) heterostructure. The device for the observation consists of a metal/insulator resonant tunneling emitter for electrons with monochromatic energy and an insulator collector barrier for the quantum interference. The effect of the parasitic collector resistance was reduced by making the device area small with electron-beam lithography, and also leakage current around the device was suppressed. These improvements led to the room-temperature observation of multiple negative differential resistance.

引用

页码：213 / 215

页数：3

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