NEGATIVE DIFFERENTIAL RESISTANCE OF METAL (COSI2)/INSULATOR (CAF2) TRIPLE-BARRIER RESONANT TUNNELING DIODE

被引：54

作者：

WATANABE, M

SUEMASU, T

MURATAKE, S

ASADA, M

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.108997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron transport and negative differential resistance in metal-insulator nanometer-thick heterostructures are reported for the first time. The structure of the samples is a resonant tunneling diode with three-barriers of 0.9-nm-thick CaF2 layers and two wells of 1.9- and 2.8-nm-thick CoSi2 layers. These layers were grown by means of partially ionized beam epitaxy for CaF2 and a two step growth technique for CoSi2. In the current-voltage characteristics at 77 K, negative differential resistance was observed in the significant number of samples and the typical peak-to-valley ratio was as high as 2. The negative differential resistance observed here can be attributed to the electron transport through the resonant levels in metal/insulator multilayered heterostructures.

引用

页码：300 / 302

页数：3

共 13 条

[1] SEQUENTIAL RESONANT TUNNELING THROUGH A MULTIQUANTUM WELL SUPERLATTICE [J].