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MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO QUANTUM INTERFERENCE OF HOT-ELECTRON WAVES IN METAL (COSI2) INSULATOR (CAF2) HETEROSTRUCTURES AND INFLUENCE OF PARASITIC CIRCUIT ELEMENTS

被引：4
作者：
SAITOH, W
SUEMASU, T
KOHNO, Y
WATANABE, M
ASADA, M
机构：
[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 8B期
关键词：
QUANTUM INTERFERENCE; MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE; METAL-INSULATOR HETEROSTRUCTURE; PARASITIC ELEMENTS; CAF2; COSI2;
D O I：
10.1143/JJAP.34.4481
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the observation of multiple negative differential resistance (NDR) in a metal (CoSi2)/insulator (CaF2) resonant tunneling hot electron transistor structure. Multiple NDR observed here can be attributed to the modulation of the transmission probability of hot electron waves due to quantum interference in the conduction band of the insulator (CaF2) collector barrier layer between two metal (CoSi2) layers. By reducing the influence of the Schottky diode at the CoSi2/Si interface, relatively clear and low-voltage NDR is observed. It is found, by a simulation including parasitic elements, that the collector resistance and leakage current greatly influence the current voltage characteristics.
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页码：4481 / 4484
页数：4
相关论文
共 10 条
[1]   TRANSISTOR ACTION OF METAL (COSI2) INSULATOR (CAF2) HOT-ELECTRON TRANSISTOR STRUCTURE [J].
MURATAKE, S ;
WATANABE, M ;
SUEMASU, T ;
ASADA, M .
ELECTRONICS LETTERS, 1992, 28 (11) :1002-1004
[2]  
SAKAGUCHI T, 1991, IEICE TRANS COMMUN, V74, P3326
[3]   ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE OF METAL (COSI2) INSULATOR (CAF2) RESONANT TUNNELING DIODE [J].
SUEMASU, T ;
WATANABE, M ;
ASADA, M ;
SUZUKI, N .
ELECTRONICS LETTERS, 1992, 28 (15) :1432-1434
[4]   QUANTUM INTERFERENCE OF ELECTRON-WAVE IN METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR STRUCTURE [J].
SUEMASU, T ;
KOHNO, Y ;
SAITOH, W ;
SUZUKI, N ;
WATANABE, M ;
ASADA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (12B) :L1762-L1765
[5]   METAL(COSI2)/INSULATOR(CAF2) RESONANT-TUNNELING DIODE [J].
SUEMASU, T ;
WATANABE, M ;
SUZUKI, J ;
KOHNO, Y ;
ASADA, M ;
SUZUKI, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :57-65
[6]  
Suemasu T., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P553, DOI 10.1109/IEDM.1993.347289
[7]  
SUEMASU T, 1994, T IEICE JPN E, V77, P1450
[8]   QUANTUM DISTRIBUTED MODEL OF THE RESONANT-TUNNELING TRANSISTOR [J].
TANIYAMA, H ;
TOMIZAWA, M ;
YOSHII, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) :294-298
[9]  
WATABABE N, 1992, JPN J APPL PHYS, V31, pL116
[10]   NEGATIVE DIFFERENTIAL RESISTANCE OF METAL (COSI2)/INSULATOR (CAF2) TRIPLE-BARRIER RESONANT TUNNELING DIODE [J].
WATANABE, M ;
SUEMASU, T ;
MURATAKE, S ;
ASADA, M .
APPLIED PHYSICS LETTERS, 1993, 62 (03) :300-302
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