Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator

被引：301

作者：

Ruemmeli, Mark H. ^{[1
,2
]}

Bachmatiuk, Alicja ^{[1
]}

Scott, Andrew ^{[1
,3
,4
]}

Boerrnert, Felix ^{[1
]}

Warner, Jamie H. ^{[5
]}

Hoffman, Volker ^{[1
]}

Lin, Jarrn-Horng ^{[6
]}

Cuniberti, Gianaurelio ^{[3
,4
]}

Buechner, Bernd ^{[1
]}

机构：

[1] IFW Dresden, D-01171 Dresden, Germany

[2] Tech Univ Dresden, Dept Phys, D-01062 Dresden, Germany

[3] Tech Univ Dresden, Inst Mat Sci, D-01062 Dresden, Germany

[4] Tech Univ Dresden, Max Bergmann Ctr Biomat, D-01062 Dresden, Germany

[5] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[6] Natl Univ Tainan, Dept Mat Sci, Tainan 700, Taiwan

来源：

ACS NANO | 2010年 / 4卷 / 07期

关键词：

graphene; chemical vapor deposition; transmission electron microscopy; synthesis; catalysis; CHEMICAL-VAPOR-DEPOSITION; CATALYST-FREE GROWTH; CARBON NANOTUBES; GRAPHENE; GRAPHITIZATION;

D O I：

10.1021/nn100971s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.

引用

页码：4206 / 4210

页数：5

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