Study of Cd-free buffer layers using Inx(OH,S)y on CIGS solar cells

被引：25

作者：

Huang, CH

Li, SS ^{[1
]}

Shafarman, WN

Chang, CH

Lambers, ES

Rieth, L

Johnson, JW

Kim, S

Stanbery, BJ

Anderson, TJ

Holloway, PH

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 69卷 / 02期

关键词：

CBD; buffer layer; CIGS; XPS; Auger; AES; CIS; photovoltaic;

D O I：

10.1016/S0927-0248(00)00386-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The alternative buffer layer material In-x(OH,S)(y) was deposited on Cu(In,Ga)Se-2 (CIGS) thin films by chemical-bath-deposition (CBD). The impurities in In-x(OH,S)(y) buffer layers and their atomic concentration were characterized by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analyses. In addition, AES was used to depth profile the samples. The band-gap energy of the deposited In-x(OH,S)(y) was determined from optical absorption data. Both the dark- and photo-current-voltage (I-V) characteristics of the CIGS solar cells with In-x(OH,S)(y) buffer layers were measured, and the results were compared to the CIGS cells deposited with CBD CdS buffer layers. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：131 / 137

页数：7

共 16 条

[1]

[Anonymous], 6 INT PHOT SCI ENG C

[2] Preparation of indium hydroxy sulfide Inx(OH)ySz thin films by chemical bath deposition [J].