Electron-phonon scattering and ballistic behavior in semiconducting carbon nanotubes -: art. no. 172112

被引:32
作者
d'Honincthun, HC [1 ]
Galdin-Retailleau, S [1 ]
Sée, J [1 ]
Dollfus, P [1 ]
机构
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR8622,UPS, F-91405 Orsay, France
关键词
D O I
10.1063/1.2119421
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the steady-state and ballistic transport properties of semiconducting zig-zag carbon nanotubes (CNTs) using semiclassical Monte Carlo simulation. Electron-phonon scattering is the only type of interaction included in the model. The band structure and phonon dispersion are derived from that of graphene by the zone folding method. Steady-state drift velocity and low-field mobility are calculated for CNTs with wrapping index ranging from n=10 to n=59, i.e., for a diameter range of 0.78-4.62 nm. Principally, a transient analysis of transport under uniform driving field is realized and gives the fraction of ballistic electrons as a function of CNT length and the mean free path (MFP) for acoustic and optical phonons scattering. The probability to have ballistic electrons on a given distance appears to be higher for nanotubes of large diameter and depends on the field applied. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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